schottky barrier diode lbas70lt1g features low forward current high breakdown voltage guard ring protected low diode capacitance. applications ultra high-speed switching voltage clamping protection circuits. description planar schottky barrier diodes with an integrated guard ring for stress protection.single diodes and double diodes with different pinning are available. sot - 23 1 2 3 bas70-05 double diode. bas70-06 double diode. 1 anode 2 anode 1 anode 3 cathode bas70 single diode. bas70-04 double diode. 3 cathode 1 anode 2 cathode 3 cathode/ anode 1 cathode 2 cathode 3 anode leshan radio company, ltd. device marking shipping cg 3000 tape & reel 10000 tape & reel 3000 tape & reel 10000 tape & reel 3000 tape & reel 10000 tape & reel ordering information cg lbas70lt1g lbas70lt3g lbas70-04lt1g lbas70-04lt3g lbas70-05lt1g lbas70-05lt3g lbas70-06lt1g lbas70-06lt3g eh eh eh gk gk 3000 tape & reel 10000 tape & reel be be we declare that the material of product compliance with rohs requirements. series rev.o 1/4 s-lbas70lt1g series s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lbas70lt1g s-lbas70lt3g s-lbas70-04lt1g s-lbas70-04lt3g s-lbas70-05lt1g s-lbas70-05lt3g s-lbas70-06lt1g s-lbas70-06lt3g
maximum ratings (t a = 25 c) parameter symbol min. max. unit conditions continuous reverse voltage v r - 70 v continuous forward current i f - 70 ma repetitive peak forward surge current i fsm - 70 ma t p <1s; <0.5 non-repetitive peak forward current i fsm - 100 ma t p <10ms storage temperature t stg -65 +150 c junction temperature t j - 150 c operating ambient temperature t amb -65 +150 c device marking lbas70lt1g=be lbas70-04lt1g=cg lbas70-05lt1g=eh lbas70-06lt1g=gk electrical characteristics( t a = 25 c ) parameter symbol max. unit conditions forward voltage(fig.1) v f 410 mv i f =1ma 750 mv i f =10ma 1v i f =15ma reverse current(fig.2 ; note1) i r 100 n v r =50v 10 av r =70v charge carrier life time (krakauer method) 100 ps i f =5ma diode capacitance(fig.4) c d 2 pf f=1mhz;v r =0 note: 1. pulse test:t p =300 s; =0.02. thermal characteristics parameter symbol v alue unit conditions thermal resistance from junction to ambient r th j-a 500 k/w note1 note 1. refer to sot23 or sot143b standard mounting conditions. leshan radio company, ltd. lbas70lt1g series , s-lbas70lt1g series rev.o 2/4
electrical characteristic curves(t a = 25 c) 10 2 10 1 10 - 1 10 -2 0 0.2 0.4 0.6 0.8 1.0 t amb =125 o c t amb = - 40 o c fig.1 forward current as a function of forward voltage; typical values. differential forward resistance ( ? ) forward voltage: v f (v) forward voltage: i f (ma) forward voltage: v r (v) forward voltage: v r (v) 10 2 10 1 10 - 1 10 -2 10 -3 0 20 40 60 80 fig.2 reverse current as a function of reverse voltage; typical values. 2 1.5 1 0.5 0 0 20 40 60 80 fig.4 diode capacitance as a function of reverse voltage;typical values. 10 3 10 2 10 1 10 -1 1 10 10 2 fig.3 differential forward resistance as a function of forward current;typical values. t amb =25 o c t amb =85 o c t amb =125 o c f=10khz f=1mhz tamb=25 o c t amb =85 o c t amb =25 o c leshan radio company, ltd. i f , forward current (ma) i r , reverse current ( a) c t , capacitance (pf) rdif rev.o 3/4 lbas70lt1g series , s-lbas70lt1g series
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev.o 4/4 lbas70lt1g series , s-lbas70lt1g series
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